Colossal negative magnetoresistance in adatom-engineered graphene

Image Caption: 
Graphene sheet with dilute covalently bonded fluorine atoms.

X. Hong, S.-H. Cheng, C. Herding and J. Zhu

Penn State MRSEC DMR-0820404: Hong et al, Phys. Rev. B 83, 085410 (2011). S.-H. Cheng supported by NSF DMR-0820404; Lowtemperature measurement supported by NSF DMR-0748604

Graphene, a sheet of carbon atoms arranged
in a honeycomb lattice, possesses many
excellent properties that are potentially useful
in electronic, optical and mechanical
applications. Attaching other chemical
species onto the graphene plane offers an
effective route to alter and engineer the
properties of graphene. NSF-supported
researchers have demonstrated that
graphene covered dilutely with covalently
bonded fluorine adatoms is vastly different
from its pristine counterpart. Most remarkably,
the electrical resistance of dilute fluorinated
graphene drops drastically in a magnetic
field, suggesting the possibility of magnetism
at play. Magnetic graphene may be of
significant technological import for data
manipulation and storage.

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