The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon as the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism. Here we report the experimental observation of the QAH state in V-doped (Bi,Sb)2Te3 films with the zero-field longitudinal resistance down to 0.00013±0.00007h/e2 (~3.35±1.76W), Hall conductance reaching 0.9998±0.0006e2/h and the Hall angle becoming as high as 89.993±0.004º at T=25mK. This realization of robust QAH state in hard FMTI’s is a major step towards dissipationless electronic applications and standard resistor without external fields.
Credits/Names: DMR-14206201: Cui-Zu Chang,1 Weiwei Zhao,2 Duk Y. Kim,2 H. Zhang,3 B. Assaf,4 D. Heiman,4 S-C Zhang,3 Chaoxing Liu,2 Moses H. W. Chan,2 and Jagadeesh S. Moodera1 (Nature Materials 2015, 1MIT, 2Penn State MRSEC, 3Stanford, 4Northeastern)
Download PDF Version: PSU MRSEC DMR1420620 SEED - PDFOptim.pdf
Year of Highlight: 2017
IRG: Seed